copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 1.0 sw 601q features r ds( on ) (max 700 ? )@v gs =0v,id=3 ma h igh switching speed general description the SW601Q is an n - channel power mosfet using samwins advanced technology to provide the customers with high switching speed. n - channel sot - 23 mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage (note 2) 600 v v dgx drain to g ate voltage (note 2) 600 v i d continuous drain current (@t c =25 o c) 0.185 a i dm drain current pulsed 0.740 a v gss gate to source voltage 20 v p d total power dissipation (@t c =25 o c) 0.5 w t j junction temperature + 150 o c t stg , storage temperature - 55 ~ + 150 o c thermal characteristics symbol parameter value unit r thja thermal resistance, junction to ambient 250 o c /w 1/4 bv dss : 600v i d : 0.185a r ds(on) : 700 1. s ource 2. g ate 3. d rain 2 3 1 1 2 3 sot - 23 samwin item sales type marking package packaging 1 sw e 601q SW601Q sot - 23 reel order codes notes: 1. absolute maximum ratings are those valuesbeyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. tj=+25 c~+150 c
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 1.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs = - 5 v, i d =250ua 600 v i d(off) drain to source leakage current v ds =600v, v gs = - 5v 0.1 ua i gss gate to source leakage current, forward v gs =20v, v ds =0v 100 na v gs = - 20v, v ds =0v - 100 na gate to source leakage current, reverse on characteristics v gs(off) gate to source cut off voltage v ds =3v, i d =8ua - 2.7 - 1.5 v i dss drain to source leakage current v ds =25v, v gs =0v 7 m a r ds(on) drain to source on state resistance v gs =0v, i d = 3 m a 330 700 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 15 pf c oss output capacitance 145 c rss reverse transfer capacitance 4 t d(on) turn on delay time v gs = - 5~5v, v dd =30v, i d =5 m a, r g =20? 40 ns tr rising time 20 t d(off) turn off delay time 45 t f fall time 280 q g total gate charge v gs = - 5~5v, v dd =30v, i d =5 m a 1300 nc q gs gate - source charge 300 q gd gate - drain charge 45 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit v sd diode forward voltage drop. i sd =3 m a, v gs = - 10v 1.4 v notes: 1. repetitive rating, pulse width limited by maximum junction temperature. 2. pulse width380s; duty cycle2%. 2/4 sw 601q samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 1.0 fig. 1. on - state characteristics 3/4 samwin sw 601q fig 3. breakdown voltage variation vs. junction temperature fig. 4. on resistance variation vs. junction temperature fig. 2. transfer characteristics
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev. 1.0 v dd dut v ds r l r gs v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 10. gate charge test circuit & waveform fig. 11 . switching time test circuit & waveform sw 601q 4/4 samwin v ds dut v gs q g q gs q gd v gs charge nc 10v fig. 13 . peak diode recovery dv/dt test circuit & waveform v dd v ds l r g v gs i s + - v ds du t *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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